silicon wafers

• Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
  硅片氧沉淀特性的测定-间隙氧含量减少法
• Dopants for silicon wafers are found in groups iii and v of the periodic table of the elements
  晶圆片搀杂剂可以在元素周期表的iii和v族元素中发现。
• Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in ic
  Ic用大直径薄硅片的氧碳含量微区试验方法
• Dopants for silicon wafers are found in groups iii and v of the periodic table of the elements
  性特导片搀杂剂可以在元素周期表的iii和v族元素中发现。
• Lab 1 apparatus : hot plate heater with silicon wafer ( right ) , connected to a temperature probe ( left )
  实验一装置：加热板与矽晶圆（右）连接至感温棒（左） 。
• Front side - the top side of a silicon wafer . ( this term is not preferred ; use front surface instead
  正面-部顶的片圆晶表面（此术语不推荐，建议使用“前部表面” ） 。
• Front side - the top side of a silicon wafer . ( this term is not preferred ; use front surface instead
  正面-晶圆片的顶部表面（此术语不推荐，建议使用“前部表面” ） 。
• Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
  通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法
• Contamination area - an area that contains particles that can negatively affect the characteristics of a silicon wafer
  沾污区域-部域区片圆晶分被颗粒沾污，造成不利特性影响。
• Contamination area - an area that contains particles that can negatively affect the characteristics of a silicon wafer
  沾污区域-部分晶圆片区域被颗粒沾污，造成不利特性影响。